SiC Substrate Dislocation Defect Non-Destructive Testing System
Specialized equipment for detecting dislocation defects in SiC substrates
Optical non-contact non-destructive testing. Classification and identification of BPD, TSD, and TED.
SiC substrates: 4"/6"/8"; conductive and semi-insulating.
Maximum detection speed: <17 minutes per wafer (6").
